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     BAS45AL All information provided in this document is subject to legal disclaimers. ? NXP B.V. 2010. All rights reserved. Product data sheet Rev. 5 — 6 August 2010 5 of 11 NXP Semiconductors BAS45AL Low-leakage diode 8. Test information VR = 125 V f = 1 MHz; Tj =25°C Fig 4. Reverse current as a function of junction temperature Fig 5. Diode capacitance as a function of reverse voltage; typical values mbd456 104 103 102 10 10?1 0 100 150 50 1 IR (nA) Tj (°C) typ max mbg524 0 010205 15 VR (V) 3 2 1 Cd (pF) Fig 6. Reverse recovery time test circuit and waveforms trr (1) + I F t output signal tr tp t 10 % 90 % VR input signal V = VR + IF × RS RS = 50 Ω IF D.U.T. Ri = 50 Ω SAMPLING OSCILLOSCOPE mga881 |